姓名：施媛媛
职称：讲师
方向：GaN功率器件及电路研究
系别：微电子系
团队：信息器件与集成微系统
邮箱：yyshi@cuit.edu.cn
【个人简介】
施媛媛，女，讲师，中共党员，博士研究生学历，博士学位。曾在中科院宁波材料所和南玻集团工作，有丰富的科研和工程开发经验。近年来，在国内外高水平期刊和重要学术会议上发表论文8篇,其中SCI收录4篇，EI收录3篇。主持横向合作项目一项。
【主讲课程】
本科生课程：《微电子器件原理》
【主持（研）项目】
1. 高效高可靠性GaN DC-DC变换器开发 (2020-2022)
【科研成果】
一、发表论文
[1] Yuanyuan Shi, Qi Zhou, Qian Cheng, et.al., “Carrier Transport Mechanisms Underlying the Bidirectional VTH Shift in p-GaN HEMTs under Forward Gate Stress” IEEE Trans. on Electron Devices, 2019, 66 (2):876-882. (SCI, IF:2.620)
[2] Yuanyuan Shi, Qi Zhou, A. Zhang, et.al., “Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device,” Nanoscale Research Letters (2017) 12:342 (SCI, IF:3.125)
[3] Yuanyuan Shi, Qi Zhou, Yang Jin, et.al., “Impact of interface traps on switching behavior of Normally-OFF AlGaN/GaN MOS-HEMTs,” Physica Solidi Status-C 2016 , 13 (5-6):328-331 (EI)
[4] Yuanyuan Shi, Qi Zhou, Qian Cheng, et.al., “Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-GaN AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection,” Int. Symp. on Power Semicond.Devices & IC's (ISPSD),Chicago, May 13-19, 2018.(Oral presentation)
[5] Yuanyuan Shi, Qi Zhou, W. Xiong, et.al., “Observation of self-recoverable gate degradation in p-GaN/AlGaN/GaN HEMTs after long-term forward gate stress: The trapping & detrapping dynamics of hole/electron,” Int. Symp. on Power Semicond.Devices & IC's (ISPSD), Shanghai, 2019，May 19-23, 2019（poster）
[6] Yuanyuan Shi, Qi Zhou, Yang Jin, et.al., “Impact of interface states on switching behavior of Normally-OFF AlGaN/GaN MIS-HEMTs,” 11th Intl. Conference on Nitride Semiconductors (ICNS), Aug. 2015.(Poster)
[7] Yuanyuan Shi, Zhan Yang, Hongtao Cao, Zhimin Liu, “Controlled c-oriented ZnO nanorod arrays and m-plane ZnO thin film growth on Si substrate by a hydrothermal method,” Journal of Crystal Growth, 312 (2010) 568–572. (SCI, IF:1.742)
[8] Y. Y. Shi, K. Tian, B. X. Lin, and Z. X. Fu, “Luminescene with local distribution and its possible mechanism in zinc oxide micro-crystallites,” Chinese Physics Letter, 24 (2007) 2398. (SCI, IF:0.847)
